Infineon IRF9Z34NPBF P-Channel MOSFET 55V 17A TO-220AB
Infineon IRF9Z34NPBF P-Channel MOSFET: 55V, 17A, 0.1 ohm on-resistance, TO-220AB package. Ideal for power management.
The Infineon IRF9Z34NPBF is a -55V single P-channel HEXFET® Power MOSFET. As a fifth-generation HEXFET device, it utilises advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedised device design for which HEXFET power MOSFETs are well known, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220AB package is universally preferred for all commercial and industrial applications at power dissipation levels of up to approximately 50W. The device features advanced process technology, a dynamic dV/dt rating, and is fully avalanche rated, ensuring robust performance in demanding conditions. With a maximum operating temperature of 175°C, it is suitable for high-temperature environments.
Key Specifications
- Channel Type: P Channel
- Drain Source Voltage (Vds): 55V
- Continuous Drain Current (Id): 17A
- Drain Source On State Resistance: 0.1 ohm
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 56W
- No. of Pins: 3 Pins
- Operating Temperature Max: 175°C
Whether for power management or other high-reliability applications, this MOSFET delivers the performance and durability required for professional designs.
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