Infineon IRFR5505TRPBF Power MOSFET, P-Channel, 55V 18A, TO-252AA

The Infineon IRFR5505TRPBF is a high-performance, fifth-generation HEXFET® P-channel Power MOSFET, engineered using advanced processing techniques to deliver an exceptional combination of efficiency and reliability. This surface-mount device achieves an extremely low ON-resistance per unit of silicon area, resulting in superior power handling and minimal energy loss during operation.

Its fast switching speed and ruggedised design ensure robust performance in demanding applications, while the fully avalanche-rated construction provides enhanced durability against voltage spikes. With a power dissipation capability of up to 1.5W in typical surface-mount configurations, this MOSFET is built for efficiency.

The component is halogen-free, adhering to modern environmental standards, and is designed for reliable mounting using vapour phase, infrared, or wave soldering techniques. Its advanced technology makes it a cornerstone for efficient power management solutions.

Key Specifications & Features

• Advanced HEXFET® Technology: Fifth-generation design for optimal performance.
• Low ON-Resistance: Just 0.11 ohm (Rds(on)) at 10V gate-source voltage, minimising conduction losses.
• High Current Handling: Continuous drain current (Id) of 18A.
• Robust Voltage Rating: Drain-source voltage (Vds) of 55V.
• Fast Switching: Enables high-efficiency operation in switching applications.
• Rugged Design: Features full avalanche and dynamic dV/dt ratings for superior reliability.
• Surface-Mount Package: Supplied in a TO-252AA (DPAK) case for easy PCB integration.
• Halogen-Free: Manufactured without halogens for environmental compliance.
• High-Temperature Operation: Maximum operating temperature of 150°C.