Infineon N-Channel Power MOSFET, 200V 76A, TO-220AB

The Infineon N-Channel Power MOSFET is a high-performance HEXFET® semiconductor device engineered for demanding power management applications. Its robust construction and advanced design make it an ideal choice for enhancing efficiency and reliability in modern electronic systems.

This single N-channel MOSFET is specifically optimised for high-efficiency synchronous rectification within Switch-Mode Power Supplies (SMPS), a critical component in reducing energy loss. It is also exceptionally well-suited for use in uninterruptible power supplies (UPS), where consistent and reliable power switching is paramount. The component excels in high-speed power switching and is designed to perform reliably in both hard-switched and high-frequency circuit environments.

Key technological advancements provide superior operational ruggedness. The device features improved gate, avalanche, and dynamic dV/dt ruggedness, ensuring it can withstand voltage spikes and stressful switching conditions without failure. Engineers benefit from fully characterised capacitance and avalanche Safe Operating Area (SOA) data, allowing for precise and safe circuit design. Furthermore, the enhanced body diode dV/dt and dI/dt capability increases the durability of the intrinsic diode during commutation, contributing to overall system longevity and stability.

Housed in the industry-standard TO-220AB through-hole package, this MOSFET offers excellent thermal performance and ease of mounting on printed circuit boards (PCBs). Its high power dissipation rating supports operation in high-current scenarios, making it a versatile and dependable component for professional and industrial electronics design.