INFINEON N-Channel Power MOSFET 20V 2.3A SOT-23

The INFINEON N-Channel Power MOSFET is an Optima™-2 small signal transistor designed for efficient and reliable switching applications. Operating in enhancement mode, this device features ultra-logic level performance, rated at 1.8V, making it highly suitable for low-voltage drive circuits and modern logic interfaces.

Built for robustness, the MOSFET is both ESD protected and avalanche rated, ensuring durability and resilience in demanding electrical environments. It is qualified according to the AEC Q101 standard, which makes it an appropriate choice for automotive applications requiring high reliability and stringent quality control.

With a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 2.3A, this transistor delivers consistent power handling. The drain-source on-state resistance is exceptionally low at 0.057 ohm when tested at 2.5V, promoting energy-efficient operation and minimising heat generation during use.

Housed in a compact SOT-23 case style, this surface-mount device occupies minimal PCB space, facilitating high-density circuit designs. It features 3 pins and can operate safely at temperatures up to 150°C. The gate-source threshold voltage is a maximum of 550mV, and the device has a power dissipation rating of 500mW.