Infineon NPN Bipolar RF Transistor 16V 5GHz 700mW SOT-23

The Infineon NPN Bipolar RF Transistor is a low noise, high linearity silicon device designed for demanding RF applications. It delivers excellent performance with an output power of 22dBm OP1dB and 31dBm OIP3 at 900MHz, 8V, and 70mA. The collector design specifically supports a 5V supply voltage, providing versatility for various circuit configurations.

This transistor is highly suitable for UHF and VHF applications, as well as serving as a reliable driver for multistage amplifiers. It is also an ideal choice for linear broadband and antenna amplifiers where signal integrity and low noise are critical.

With a transition frequency of 5GHz and a maximum collector-emitter voltage of 16V, this component ensures robust operation. It features a power dissipation of 700mW and a continuous collector current of 210mA. Enclosed in a compact SOT-23 surface mount package with 3 pins, it is qualified according to the AEC-Q101 standard, making it suitable for automotive and industrial environments.

Key Specifications

• Transistor Polarity: NPN
• Max Collector Emitter Voltage: 16V
• Transition Frequency: 5GHz
• Power Dissipation: 700mW
• Continuous Collector Current: 210mA
• DC Current Gain (hFE): 70
• Mounting: Surface Mount
• Operating Temperature Max: 150°C
• Dimensions: 43mm x 33mm x 15mm
• Weight: 0.002g