Infineon OptiMOS 3 N-Channel MOSFET, 150 V, 100 A, TO-263

The Infineon IPB072N15N3 G is an OptiMOS™ 3 N-channel Power MOSFET designed for high-performance power management and conversion. Featuring a remarkably low on-state resistance of just 5.8 milliohms, this transistor ensures minimal conduction losses, leading to improved system efficiency and reduced heat generation.

Engineered for excellent switching performance, the IPB072N15N3 G offers a superior gate charge x R_DS(on) figure of merit (FOM), enabling faster switching transitions and lower switching losses. This translates to increased efficiency and reliability in demanding applications such as power supplies, motor drives, and communications equipment.

The compact TO-263 (D2PAK) surface-mount package minimizes board-space consumption, allowing for high power density in space-constrained designs. With a drain-source voltage rating of 150V and a continuous drain current of 100A, this MOSFET handles substantial power loads with ease. It also features a maximum power dissipation of 300W, ensuring robust thermal performance.

Key specifications include a gate-source threshold voltage of 3V, an operating temperature range up to 175°C, and a 3-pin configuration. The device is environment-friendly and easy to design into a wide variety of circuits, making it a versatile choice for engineers seeking high efficiency and compactness.

Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 150V
• Continuous Drain Current (Id): 100A
• On-State Resistance (Rds(on)): 5.8 mΩ (5800 µΩ) @ Vgs = 10V
• Power Dissipation: 300W
• Gate-Source Threshold Voltage (Max): 3V
• Operating Temperature (Max): 175°C
• Package: TO-263 (D2PAK), Surface Mount
• Number of Pins: 3