Infineon OptiMOS N-Channel Power MOSFET 100V 100A TO-220

The Infineon IPP045N10N3 G OptiMOS™ N-Channel Power MOSFET delivers a high-efficiency, high-power-density solution for advanced switch-mode power supply (SMPS) designs. Engineered with cutting-edge technology, this family achieves a substantial 30% reduction in both RDS(ON) and Figure of Merit (FOM) compared to previous-generation alternatives, making it a leader in performance for demanding power management applications.

Key advantages include the world's lowest RDS(ON), very low gate charge (Qg and Qgd), and an excellent gate charge x RDS(ON) product (FOM). These characteristics translate directly into higher system efficiency, reduced switching losses, and superior thermal performance. The high power density means fewer components are needed in parallel, leading to a smaller overall board footprint and simplified design processes for engineers.

Features & Benefits

• Unmatched Efficiency: World's lowest on-state resistance minimises conduction losses.
• High Power Density: Enables more compact and powerful designs.
• Design Flexibility: Easy-to-design with excellent FOM, reducing paralleling requirements.
• Robust Construction: Through-hole TO-220 package ensures reliable mechanical mounting and heat dissipation.
• Environmental Compliance: Halogen-free and classified as a Green device, adhering to modern environmental standards.
• Reliable Sourcing: MSL1 (Moisture Sensitivity Level 1) rated for robust handling and storage.

Primary Applications

This versatile power MOSFET is ideally suited for a wide range of high-current switching applications, including:

• Switch-Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Drive and Control Systems
• Industrial Automation and Control
• Automotive Power Systems
• High-Fidelity Audio Amplifiers

With its combination of high voltage and am