
Discover the INFINEON P Channel HEXFET Power MOSFET, 100V, 23A, featuring low on-resistance and fast switching for reliable power management.
The INFINEON P Channel Power MOSFET is a high-performance HEXFET device housed in a robust TO-220AB package. Engineered for exceptional efficiency and reliability, this MOSFET features extremely low on-resistance per silicon area, ensuring minimal power loss and optimal performance in demanding environments.
Designed with a dynamic dv/dt rating, this component is both rugged and fast-switching, making it fully avalanche rated for superior durability. These advanced characteristics make it an ideal choice for a wide variety of applications requiring precise power management and robust switching capabilities.
Key Specifications
Whether you are designing industrial systems or consumer electronics, this through-hole MOSFET delivers the fast switching and rugged performance required for modern power applications.
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