Infineon Power MOSFET N Channel 100V 192A TO-220AB

The Infineon Power MOSFET is a high-performance N-channel device from the StrongIRFET™ and HEXFET® families, engineered for demanding power switching applications. This through-hole transistor, housed in a robust TO-220AB package, is designed to deliver excellent electrical and thermal performance in a wide range of circuits.

This MOSFET features improved gate, avalanche, and dynamic dV/dt ruggedness, ensuring reliable operation in harsh conditions. It also offers fully characterized capacitance and avalanche SOA, giving designers confidence in their circuit designs. The enhanced body diode capabilities (dV/dt and dI/dt) reduce the risk of failure in bridge topologies and improve overall system robustness.

Ideal for both brushed and brushless DC motor drives, this component excels in battery-powered systems, half-bridge and full-bridge configurations, synchronous rectification, resonant power supplies, and OR-ing circuits. It is also well-suited for AC/DC and DC/DC converters, as well as DC/AC inverters.

The transistor features a drain-source voltage of 100 V and can handle a continuous drain current of 192 A, making it suitable for high-current applications. The on-state resistance is rated at 4200 µΩ, and the device can dissipate up to 441 W. With a maximum operating temperature of 175°C and a threshold voltage of 4 V, this MOSFET is built for high-stress environments.

Specifications:

• Channel Type: N Channel
• Drain Source Voltage (Vds): 100 V
• Continuous Drain Current (Id): 192 A
• Drain Source On-State Resistance: 4200 µΩ
• Package: TO-220AB
• Mounting Type: Through Hole
• Rds(on) Test Voltage: 10 V
• Gate Source Threshold Voltage Max: 4 V
• Power Dissipation: 441 W
• Number of Pins: 3
• Operating Temperature Max: 175°C
• Product Range: StrongIRFET, HEXFET