Multicomp Pro BDV66B PNP Darlington Power Transistor, TO-247

The Multicomp Pro BDV66B is a robust Silicon PNP complementary Darlington power transistor, engineered for high-power switching and amplification applications. It features a monolithic construction with an integrated base-emitter shunt resistor, simplifying circuit design and enhancing reliability by providing inherent stability.

This transistor is designed to handle significant power, with a collector-emitter sustaining voltage (Vceo(sus)) rated at a minimum of 100V. It offers efficient operation with a maximum collector-emitter saturation voltage (Vceo(sat)) of just 2V at a collector current of 10A, which helps to minimise power loss and heat generation during switching. The robust voltage ratings, including a collector-base voltage (Vcbo) of 100V and an emitter-base voltage (Vebo) of 5V, make it suitable for demanding industrial environments.

Encased in the industry-standard TO-247 package, the BDV66B is designed for through-hole mounting, ensuring a secure mechanical and thermal connection to a heatsink. With a high power dissipation rating of 125W and a maximum DC collector current of 16A, it is capable of driving heavy loads. Its wide operating temperature range, up to 150°C, allows for reliable performance in challenging conditions. The device is supplied with three pins for straightforward integration into a wide variety of circuit designs, from power supplies and motor controllers to audio amplifiers and industrial control systems.