Multicomp Pro Bipolar NPN Transistor, 80V 1A, TO-39, 5W

The Multicomp Pro Bipolar (BJT) Single Transistor is a high-performance, general-purpose NPN silicon transistor housed in a robust TO-39 metal can package. Designed for through-hole mounting, this component is engineered to deliver reliable amplification and switching capabilities in a wide range of electronic circuits.

With a high collector-emitter voltage (V_CE) of 80V and a continuous collector current (I_C) rating of 1A, this transistor is well-suited for handling moderate power levels. Its substantial 5W power dissipation rating allows it to manage significant heat, making it a durable choice for demanding applications. The device also boasts a high transition frequency of 400MHz, supporting use in radio frequency (RF) and fast-switching circuits.

Characterised by a minimum DC current gain (h_FE) of 100, it provides excellent signal amplification. The component is rated for a maximum operating temperature of 200°C, ensuring stable performance even in high-temperature environments. Its three-pin configuration simplifies circuit design and integration.

Key Specifications & Features

• Transistor Polarity: NPN
• Maximum Collector-Emitter Voltage (V_CEO): 80V
• Continuous Collector Current (I_C): 1A
• Maximum Power Dissipation (P_TOT): 5W
• Package / Case Style: TO-39 (Metal Can)
• Mounting Type: Through Hole
• Number of Pins: 3
• Transition Frequency (f_T): 400MHz
• Minimum DC Current Gain (h_FE): 100
• Maximum Operating Temperature: 200°C
• Approximate Dimensions (H x W x D): 43mm x 33mm x 15mm
• Approximate Weight: 2.27 grams