Multicomp Pro Bipolar NPN Transistor, 80V 1A, TO-39, 5W
Multicomp Pro 80V 1A NPN transistor in TO-39 case. 5W power, 400MHz frequency for amplification, switching & RF circuits.
The Multicomp Pro Bipolar (BJT) Single Transistor is a high-performance, general-purpose NPN silicon transistor housed in a robust TO-39 metal can package. Designed for through-hole mounting, this component is engineered to deliver reliable amplification and switching capabilities in a wide range of electronic circuits.
With a high collector-emitter voltage (VCE) of 80V and a continuous collector current (IC) rating of 1A, this transistor is well-suited for handling moderate power levels. Its substantial 5W power dissipation rating allows it to manage significant heat, making it a durable choice for demanding applications. The device also boasts a high transition frequency of 400MHz, supporting use in radio frequency (RF) and fast-switching circuits.
Characterised by a minimum DC current gain (hFE) of 100, it provides excellent signal amplification. The component is rated for a maximum operating temperature of 200°C, ensuring stable performance even in high-temperature environments. Its three-pin configuration simplifies circuit design and integration.
Key Specifications & Features
- Transistor Polarity: NPN
- Maximum Collector-Emitter Voltage (VCEO): 80V
- Continuous Collector Current (IC): 1A
- Maximum Power Dissipation (PTOT): 5W
- Package / Case Style: TO-39 (Metal Can)
- Mounting Type: Through Hole
- Number of Pins: 3
- Transition Frequency (fT): 400MHz
- Minimum DC Current Gain (hFE): 100
- Maximum Operating Temperature: 200°C
- Approximate Dimensions (H x W x D): 43mm x 33mm x 15mm
- Approximate Weight: 2.27 grams
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