
NEXPERIA BC856BW PNP transistor, 65V, 100mA, 200mW in SOT-323 package. For general-purpose switching & amplification.
The NEXPERIA BC856BW,115 is a general-purpose PNP bipolar junction transistor (BJT) housed in a compact, surface-mount SOT-323 plastic package. Designed for reliable performance in a wide range of electronic circuits, this transistor is a fundamental component for switching and amplification applications where space is at a premium.
Key Features & Specifications
With a maximum collector-emitter voltage (VCE) of -65V and a continuous collector current rating of -100mA, this transistor offers robust electrical characteristics for low-power designs. It has a power dissipation rating of 200mW, making it suitable for energy-efficient circuits. The device features a high transition frequency of 100MHz and a typical DC current gain (hFE) of 220, ensuring good amplification and fast switching response.
Design & Applications
Its small SOT-323 footprint is ideal for modern, densely populated printed circuit boards (PCBs) in consumer electronics, industrial controls, and power management systems. The transistor operates over a broad temperature range up to a maximum of 150°C, providing stability and reliability in demanding environments. This PNP type is the complementary pair to NEXPERIA's NPN transistors in the BC846W, BC847W, and BC848W series, allowing for flexible circuit design in push-pull amplifiers and other complementary configurations.
Reliability & Compliance
As a product from NEXPERIA, a leader in semiconductor manufacturing, this transistor is built to high-quality standards. It is marked with the 3B identification code for easy traceability and is confirmed to contain no Substances of Very High Concern (SVHC) as of the latest assessment. This component is an essential, reliable choice for engineers and hobbyists designing compact, efficient, and high-performance electronic systems.
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