Nexperia Dual Trench N Channel MOSFET 60V 320mA 1 ohm SOT-363

The Nexperia Dual Trench N Channel MOSFET is a 60V, 320mA enhancement-mode Field-Effect Transistor (FET) designed for high-efficiency switching. Housed in a very small SOT-363 (SC-88) Surface-Mounted Device (SMD) plastic package, it utilises advanced Trench MOSFET technology to deliver reliable performance in compact circuits.

This MOSFET is logic-level compatible, ensuring seamless integration with low-voltage control systems. It features very fast switching speeds, making it highly effective for dynamic and high-frequency applications. Additionally, the device includes ESD protection up to 1.5kV, safeguarding against electrostatic discharge during handling and operation. It is also AEC-Q101 qualified, confirming its suitability for demanding automotive environments.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 320mA
• Drain Source On State Resistance: 1.6 ohm
• Power Dissipation: 280mW
• Number of Pins: 6
• Maximum Operating Temperature: 150°C

Ideal for a variety of circuit designs, this dual MOSFET is particularly well-suited for relay drivers, high-speed line drivers, low-side load switches, and general switching circuit applications. Its compact SOT-363 package allows for space-saving PCB layouts, making it an excellent choice for modern, miniaturised electronic assemblies.