NEXPERIA N Channel Power MOSFET 60V 320mA 1.6ohm SOT-323

This NEXPERIA N-channel Power MOSFET utilises advanced Trench MOSFET technology, housed in a compact surface-mount plastic package. Designed as an enhancement-mode Field Effect Transistor (FET), it offers reliable and efficient performance for a variety of electronic circuits.

The device is logic-level compatible, ensuring seamless integration with low-voltage control systems. It features robust ESD protection up to 1.5kV and provides very fast switching capabilities, making it highly effective for dynamic and high-speed operations. Furthermore, this MOSFET is AEC-Q101 qualified, confirming its suitability for demanding automotive environments, with a wide junction temperature range from -55°C to 150°C.

With a drain-source voltage of 60V and a continuous drain current of 320mA, this component is well-suited for relay driving, high-speed line driving, low-side load switching, and general switching circuit applications. Its SOT-323 case style ensures a minimal footprint on printed circuit boards.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 320mA
• Drain Source On State Resistance: 1.6ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 1.1V
• Power Dissipation: 260mW
• No. of Pins: 3
• Operating Temperature Max: 150°C
• Transistor Case Style: SOT-323
• Transistor Mounting: Surface Mount
• Weight: 0.454 grams
• Dimensions: 43 mm (H) x 33 mm (W) x 15 mm (D)