NEXPERIA N-Channel Trench Power MOSFET, 55V, 210mA, SOT-23 SMD
NEXPERIA N-Channel Trench MOSFET, 55V, 210mA. Features fast switching & ESD protection in a SOT-23 SMD package.
The NEXPERIA N-Channel Trench Power MOSFET is an enhancement mode Field-Effect Transistor (FET) housed in a compact SOT-23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Utilising advanced Trench MOSFET technology, this transistor delivers efficient and reliable performance for a variety of electronic switching applications.
Designed for versatility, it features a low threshold voltage and very fast switching speeds, making it highly responsive in demanding circuits. Additionally, the device includes robust ElectroStatic Discharge (ESD) protection, rated greater than 3 kV HBM, ensuring excellent resilience in sensitive environments.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 55V
- Continuous Drain Current (Id): 210mA
- Drain Source On State Resistance: 2.3 Ohm
- Rds(on) Test Voltage: 4.5V
- Gate Source Threshold Voltage Max: 1V
- Power Dissipation: 302mW
- Number of Pins: 3
- Maximum Operating Temperature: 150°C
With a high maximum operating temperature and efficient power dissipation, this MOSFET is built to perform consistently. Its surface-mount design allows for streamlined integration into automated assembly processes.
- Product Weight: 0.02 grams
- Dimensions: 43 mm x 33 mm x 15 mm (H x W x D)
- Dispatched within 0-2 business days
- Delivery to United States: 3-5 business days*
- Free Shipping Included
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