NEXPERIA P Channel Power MOSFET 20V 1A 0.2ohm SOT-323

The NEXPERIA P Channel Power MOSFET is an enhancement mode Field-Effect Transistor (FET) housed in a compact SOT-323 (SC-70) Surface Mounted Device (SMD) plastic package. Utilising advanced Trench MOSFET technology, this component is engineered for efficiency and performance in demanding electronic circuits.

This MOSFET features low drain-source on-state resistance (RDS(on)) and very fast switching capabilities, making it highly effective for applications requiring quick response times and minimal power loss. Key electrical characteristics include a drain-source breakdown voltage of -20V and a typical gate-source threshold voltage of -0.9V. The typical drain-source on-state resistance is 175mohm at VGS=-4.5V, while the total gate charge is typically 2.6nC.

Performance Specifications

• Switching Speeds: Typical rise time of 16ns and fall time of 13ns
• Capacitance: Typical output capacitance of 43pF
• Robust Operation: Ambient temperature range from -55°C to 150°C
• Power Dissipation: 290mW

Designed for surface mount assembly, this 3-pin device offers a reliable solution for modern, space-constrained PCB layouts. Its combination of low resistance and high-speed switching ensures optimal performance in a variety of power management and switching applications.