ON Semiconductor FDD4685 Power MOSFET P Channel 40V 32A DPAK
ON Semiconductor FDD4685 P-Channel MOSFET: 40V, 32A, low RDS(on), surface mount DPAK for efficient power switching in AC/DC supplies.
The ON Semiconductor FDD4685 is a P-Channel PowerTrench® MOSFET engineered to deliver superior switching performance in a compact surface-mount package. This component is specifically designed to minimize on-state resistance (RDS(on)) and maintain a low gate charge, enabling efficient operation in high-frequency power conversion circuits.
Featuring an advanced shielded-gate structure, the FDD4685 achieves charge balance, significantly improving the figure of merit (FOM) by up to 66% compared to previous-generation devices. The integrated soft recovery body diode reduces voltage spikes, which can eliminate the need for external snubber circuits in synchronous rectification applications. This device is optimized for AC/DC power supplies, offering fast switching with low reverse recovery charge (Qrr).
Key Benefits
- Extremely low drain-source on-state resistance (0.027 ohm) for reduced conduction losses
- Low gate charge (QG) for rapid switching and high efficiency
- Soft body diode minimizes undesirable voltage spikes
- High-performance trench technology for enhanced reliability
- Surface-mount TO-252 (DPAK) package for compact PCB designs
- Suitable for general-purpose power switching applications
Specifications
- Channel Type: P-Channel
- Drain-Source Voltage (Vds): -40V
- Continuous Drain Current (Id): -32A
- Drain-Source On-State Resistance: 0.027 ohm
- Gate-Source Threshold Voltage (Max): 1.6V
- Power Dissipation: 69W
- Operating Temperature (Max): 150°C
- MSL Level: MSL 1 - Unlimited
This MOSFET is a reliable choice for designers seeking high-performance power management in a space-saving package.
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