ON Semiconductor MMBT3904WT1G NPN Bipolar Transistor, 200mA, SOT-323 SMD

The ON Semiconductor MMBT3904WT1G is a general-purpose NPN bipolar junction transistor (BJT) engineered for low-power, surface-mount applications. Its compact SOT-323 package makes it ideal for space-constrained PCB designs where reliable amplification and switching are required.

This transistor is characterised by a low RDS(ON), which contributes to higher circuit efficiency and can help extend battery life in portable devices. It is AEC-Q101 qualified and PPAP capable, meeting stringent standards for reliability in demanding environments such as automotive and industrial systems.

Key Features & Specifications

• Transistor Type: NPN Bipolar Junction Transistor (BJT)
• Maximum Collector-Emitter Voltage (Vce): 40V
• Continuous Collector Current (Ic): 200mA
• Maximum Power Dissipation: 150mW
• High DC Current Gain (hFE): Minimum of 300
• Transition Frequency (fT): 300MHz, suitable for high-speed switching applications
• Package: SOT-323 (Surface-Mount Device)
• Mounting: Surface Mount
• Pin Count: 3 Pins
• Operating Temperature Range: Up to 150°C

Designed for versatility, the MMBT3904WT1G is a core component in the MMBTxxxx product range from ON Semiconductor, offering a robust solution for amplification circuits, signal processing, and power management functions.