ONSEMI FOD817B Phototransistor Optocoupler DIP 4 Pin

The ONSEMI FOD817B is a single-channel phototransistor optocoupler that integrates a gallium arsenide infrared emitting diode with a silicon phototransistor. This compact DIP package offers reliable signal isolation and is designed for demanding industrial and power management applications.

With a guaranteed minimum collector-emitter breakdown voltage (BVCEO) of 70V and a high allowable overvoltage up to 8000V, the FOD817B provides robust performance. It features a maximum working insulation voltage of 850V, ensuring safe isolation between input and output circuits. The device supports a forward current of up to 50mA and delivers a minimum current transfer ratio (CTR) of 130%, ensuring efficient signal transfer.

Ideal for use in power supply regulators, digital inputs, and microprocessor interfaces, this optocoupler is housed in a standard 4-pin DIP package with a 5kV isolation voltage rating. Its proven design and high-quality construction make it a dependable choice for engineers and technicians seeking a reliable isolation solution in a wide range of electronic systems.