ONSEMI FQP47P06 P-Channel QFET MOSFET, 60V 47A, TO-220

The ONSEMI FQP47P06 is a high-performance -60V P-channel QFET® MOSFET, engineered using advanced planar stripe and DMOS technology. This sophisticated design is specifically tailored to minimise on-state resistance while delivering superior switching performance and exceptional avalanche energy strength, making it a reliable and efficient choice for demanding power management circuits.

Key electrical characteristics include a very low typical gate charge of just 84nC and a low reverse transfer capacitance (Crss) of 320pF, which contribute to reduced switching losses and improved overall efficiency. The device is 100% avalanche tested for ruggedness and can handle a gate-to-source voltage of ±25V. With a continuous drain current rating of 47A and an on-state resistance of only 0.026ohm, it ensures minimal power dissipation during operation.

Thermal Performance & Construction

Designed for effective heat management, the MOSFET features a thermal resistance of 62.5°C/W from junction to ambient and 0.94°C/W from junction to case. It is housed in the industry-standard TO-220 through-hole package, which offers excellent thermal coupling to a heatsink and facilitates robust mechanical mounting. The device has a high maximum power dissipation of 160W and can operate at junction temperatures up to 175°C.

Primary Applications

This MOSFET is ideally suited for a wide range of medium-to-high-power switching applications. It is an excellent component for switched-mode power supplies (SMPS), audio amplifier output stages, DC motor control systems, and variable switching power circuits. Its combination of low Rds(on), high current capability, and robust switching characteristics makes it a versatile solution for designers seeking efficiency and reliability.

Specifications

• Technology: QFET® with planar stripe DMOS
• Channel Type: P-Channel
• **Drain-Source Voltage (