ONSEMI IGBT Single Transistor, 120A, 650V, TO-3PN

The ONSEMI IGBT Single Transistor is a high-performance power transistor designed for demanding electronic applications. Combining the high-input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT (Insulated-Gate Bipolar Transistor) offers efficient switching and robust performance in power conversion circuits.

With a continuous collector current rating of 120A and a maximum collector-emitter voltage of 650V, this component is built to handle significant power levels. It features a low collector-emitter saturation voltage of 1.9V, which minimises power loss during conduction, improving overall system efficiency. The device has a substantial power dissipation capability of 600W, ensuring reliable operation under high-stress conditions.

Housed in a robust TO-3PN through-hole package, it provides excellent thermal performance and mechanical durability for secure mounting on printed circuit boards (PCBs). The package style is designed for effective heat sinking, which is crucial for managing the 600W power dissipation. With a maximum operating temperature of 175°C, this IGBT is suitable for use in high-temperature environments commonly found in industrial settings.

This transistor is a fundamental component for engineers and technicians designing or repairing inverters, motor drives, uninterruptible power supplies (UPS), welding equipment, and high-power switch-mode power supplies. Its reliable construction and specified electrical characteristics make it an ideal choice for applications requiring efficient control and switching of high currents and voltages.