ONSEMI MMBTA92 PNP Bipolar Transistor, -300V, SOT-23

The ONSEMI MMBTA92LT1G is a high-voltage PNP bipolar junction transistor (BJT) engineered for reliable performance in general-purpose amplifier circuits. Housed in a compact SOT-23 package, it is specifically designed for low-power surface-mount applications, making it ideal for modern, space-constrained electronic designs.

This transistor is AEC-Q101 qualified and PPAP capable, ensuring it meets rigorous standards for quality and reliability, which is essential for demanding industrial, power management, and automotive applications. Its robust construction allows it to operate effectively in environments where consistent performance is critical.

Key Specifications

• Transistor Type: PNP Bipolar Junction Transistor (BJT)
• Maximum Collector-Emitter Voltage (Vce): -300V
• Continuous Collector Current (Ic): -500mA
• Maximum Power Dissipation: 300mW
• DC Current Gain (hFE): 50
• Transition Frequency: 50MHz
• Maximum Operating Temperature: +150°C
• Package: 3-pin SOT-23 (Surface-Mount)

With its high voltage capability and stable gain characteristics, this component is a versatile choice for switching and amplification stages in power supplies, motor control interfaces, and signal conditioning circuits. Its surface-mount design facilitates automated assembly processes, improving manufacturing efficiency.