ONSEMI N Channel Power MOSFET 40V 12.8A 0.0105 ohm SOIC

This single N-channel Power MOSFET from ONSEMI is produced using the advanced PowerTrench® process. It has been specifically tailored to minimise the ON-state resistance whilst maintaining superior switching performance, making it highly efficient for power management applications.

Featuring high-performance trench technology, this component achieves extremely low RDS(ON), which contributes to reduced power loss and improved overall system efficiency. The device boasts a low gate charge, high power handling capability, and robust current handling, which are essential for demanding electronic circuits.

With a drain-source voltage of 40 V and a continuous drain current of 12.8 A, this MOSFET is suitable for a variety of switching and power control tasks. It comes in an SOIC surface mount case style with 8 pins, allowing for compact and efficient PCB assembly.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 40 V
• Continuous Drain Current (Id): 12.8 A
• Drain Source On State Resistance: 0.0105 ohm
• Transistor Case Style: SOIC
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 10 V
• Gate Source Threshold Voltage Max: 1.8 V
• Power Dissipation: 2.5 mW
• No. of Pins: 8
• Operating Temperature Max: 150°C
• Dimensions: 43 mm (H) x 33 mm (W) x 15 mm (D)
• Weight: 0.224 grams