ONSEMI P Channel Power MOSFET, 60V, 17A, 0.12 ohm, TO-220

The ONSEMI P Channel Power MOSFET is produced using advanced planar stripe and DMOS technology. This QFET® enhancement mode MOSFET has been specifically tailored to reduce on-state resistance, providing superior switching performance and high avalanche energy strength. It is a highly versatile component, suitable for a wide range of general-purpose applications.

Key Benefits and Features

This MOSFET offers significant performance advantages, including low gate charge and lower conduction loss, which contribute to overall switching loss improvements. It is 100% avalanche tested, ensuring improved system reliability, particularly in Power Factor Correction (PFC) and soft switching topologies. Furthermore, it boasts a robust maximum junction temperature rating of 175°C, allowing for reliable operation in demanding thermal environments.

Product Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 17A
• Drain Source On-State Resistance: 0.12 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 79W
• Number of Pins: 3
• Transistor Mounting: Through Hole
• Maximum Operating Temperature: 175°C
• Dimensions: 43 mm (Height) x 33 mm (Width) x 15 mm (Depth)
• Weight: 2 grams

With its TO-220 package and through-hole mounting design, this MOSFET is straightforward to integrate into your electronic circuits.