ONSEMI Power MOSFET, N-Channel, 55V, 75A, TO-247

The ONSEMI HUF75344G3 is an N-channel UltraFET Power MOSFET engineered with an advanced process technology to deliver outstanding performance and high power efficiency. This device achieves the lowest possible on-resistance per silicon area, resulting in superior switching characteristics and minimal power loss, making it an ideal choice for demanding applications where thermal management and efficiency are critical.

A key feature of this MOSFET is its robust construction, which allows it to withstand high energy in avalanche mode. The integrated body diode exhibits a very low reverse recovery time and stored charge, further enhancing its performance in fast-switching circuits and reducing potential voltage spikes.

Designed for Power Management

This component is specifically designed for applications where power conversion and management are paramount. It is perfectly suited for use in switching regulators and DC-DC converters, where its low RDS(on) directly contributes to higher system efficiency. Its capabilities also extend to relay drivers, low-voltage bus switches, and power management subsystems within portable and battery-operated products, helping to extend battery life.

Key Specifications & Robustness

• High Current Handling: Capable of a continuous drain current (Id) of 75A.
• Low On-Resistance: A drain-source on-state resistance (RDS(on)) of just 8000 µΩ ensures minimal conduction losses.
• Avalanche Rated: Engineered to endure high energy in avalanche mode for improved reliability in inductive load scenarios.
• Fast Body Diode: Features a diode with very low reverse recovery characteristics.
• Wide Operating Temperature: Can operate at temperatures up to 175°C.

Housed in a robust TO-247 package for through-hole mounting, this MOSFET offers excellent thermal performance, supporting a high power dissipation of 285W. Its design and