ONSEMI SMD N Channel Power MOSFET 100V 170mA SOT-23

The ONSEMI SMD N Channel Power MOSFET is an AEC-Q101 qualified component, making it highly suitable for automotive and industrial applications that demand rigorous reliability standards. It is also PPAP capable, ensuring it consistently meets stringent production part approval process requirements for critical systems.

This MOSFET features an N Channel configuration with a drain source voltage (Vds) of 100V and a continuous drain current (Id) of 170mA. The drain source on-state resistance is rated at 6 ohm when tested at 10VDC, providing efficient and predictable switching performance. The gate source threshold voltage reaches a maximum of 2.6V, with a total power dissipation capacity of 225mW.

Designed specifically for surface mount installations, the transistor comes in a compact SOT-23 case style featuring 3 pins. It operates reliably in demanding environments, supporting a maximum operating temperature of 150°C. This robust combination of electrical characteristics and compact packaging makes it an excellent choice for low-power switching, load control, and amplification tasks in space-constrained circuit designs.