STMICROELECTRONICS BD679 NPN Darlington Transistor, 4A 80V, TO126
STMICROELECTRONICS BD679 80V 4A NPN Darlington power transistor in TO126 package. Features fast switching & low saturation voltage.
The STMICROELECTRONICS BD679 is a robust 60V Silicon NPN complementary power Darlington transistor, engineered using advanced planar base island technology. Its monolithic Darlington configuration integrates an anti-parallel collector-emitter diode, enhancing its performance and reliability in demanding circuits. This design facilitates fast switching times and delivers a very low saturation voltage, which significantly reduces both switching and conduction losses, leading to improved overall efficiency.
A key strength of this component is its excellent technical consistency, featuring good hFE linearity and a high fT frequency. These well-controlled parameters ensure predictable performance and increased operational reliability, making it a trusted choice for precision industrial applications. It is supplied in a through-hole TO126 (SOT-32) package, which is widely used and facilitates secure mounting on printed circuit boards.
Technical Specifications
- Transistor Type: Silicon NPN Darlington
- Configuration: Monolithic Darlington with integrated diode
- Collector-Emitter Voltage (VBR)CEO: 80V
- Continuous Collector Current: 4A
- Power Dissipation: 40W
- DC Current Gain (hFE): 750
- Package / Case: TO126 (SOT-32)
- Mounting Type: Through Hole
- Operating Temperature Max: 150°C
With its combination of high current gain, substantial power handling, and robust voltage ratings, the BD679 is an essential component for designers seeking dependable power amplification and switching solutions.
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