STMICROELECTRONICS M24M02-DRMN6TP 2 Mbit I2C EEPROM, 256K x 8 Bit, SOIC-8

The STMICROELECTRONICS M24M02-DRMN6TP is a high-performance 2-Mbit EEPROM (Electrically Erasable Programmable Read-Only Memory) designed for reliable, long-term data storage in a wide range of electronic applications. Organised as 256K x 8 bits, this serial I2C (2-wire) memory component offers flexible interfacing and robust operation.

It features a broad supply voltage range from 1.8V to 5.5V, ensuring compatibility with various logic levels and system designs. The device supports multiple I2C bus modes, including high-speed operation at 1MHz, as well as 400kHz and 100kHz, providing versatility for different performance and power requirements.

Key Performance Features

• High Endurance & Retention: With a write cycle endurance of 4 million cycles and a minimum data retention period of 200 years at 55°C, this EEPROM is built for applications requiring frequent updates and long-term reliability.
• Efficient Write Operations: It supports both byte and page write modes, with a maximum write time of 10ms. The page size is 256 bytes, allowing for efficient programming of larger data blocks.
• Advanced Protection: The memory array includes write-protect functionality for the entire chip, alongside enhanced ESD (Electrostatic Discharge) and latch-up protection to safeguard against electrical damage during handling and operation.
• Low Power Consumption: In standby mode, the device consumes a typical supply current of just 3µA, making it suitable for battery-powered and energy-sensitive designs.

The component is housed in a compact, surface-mount 8-pin SOIC package and is rated for an industrial ambient temperature range from -40°C to +85°C. This makes it an ideal choice for embedded systems, consumer electronics, industrial controls, and automotive subsystems where dependable non-volatile memory is essential.