STMicroelectronics Power MOSFET N Channel 600V 4A 2 Ohm TO-220FP
STMicroelectronics 600V N Channel Power MOSFET. Features SuperMESH technology, low on-resistance & Zener protection. TO-220FP through hole.
The STMicroelectronics N Channel Power MOSFET is developed using advanced SuperMESH™ technology, which is achieved through the optimisation of the well-established strip-based PowerMESH™ layout. This innovative design significantly reduces on-resistance while ensuring excellent dv/dt capability, making it suitable for the most demanding applications.
This power MOSFET features improved gate charge and lower power dissipation, designed to meet challenging efficiency requirements. It is 100% avalanche tested and offers very low intrinsic capacitance. Additionally, the device is Zener-protected, safeguarding the gate against electrostatic discharge.
With a drain-source voltage of 600V and a continuous drain current of 4A, this component delivers reliable performance. The through-hole mounting and TO-220FP case style ensure straightforward installation on circuit boards.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 600V
- Continuous Drain Current (Id): 4A
- Drain Source On State Resistance: 2 Ohm
- Power Dissipation: 25W
- Gate Source Threshold Voltage Max: 3.75V
- Rds(on) Test Voltage: 10V
- Operating Temperature Max: 150°C
- Number of Pins: 3
- Dimensions: 43 mm x 33 mm x 15 mm
- Weight: 4.445 g
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