STMICROELECTRONICS NPN Darlington Transistor TO220

The STMICROELECTRONICS NPN Darlington Transistor is a complementary power device housed in a robust TO-220 package, designed for through-hole mounting. Manufactured using advanced planar technology with a “base island” layout and a monolithic Darlington configuration, this transistor delivers exceptionally high gain performance coupled with very low saturation voltage.

This component is engineered to handle demanding power requirements, offering a collector to emitter voltage of 60V and a maximum collector current of 5A. With a power dissipation capability of 65W and a DC current gain of 1000, it ensures reliable and efficient operation in various circuit designs. The collector to emitter saturation voltage is just 4V at a 5A collector current, minimising power loss and heat generation during operation.

Key Specifications

• Transistor Polarity: NPN
• Package Type: TO-220
• Mounting Style: Through Hole
• Collector Emitter Voltage (V(br)ceo): 60V
• DC Collector Current (Ic): 5A
• Power Dissipation (Pd): 65W
• DC Current Gain (hFE): 1000
• Collector to Emitter Saturation Voltage: 4V at 5A
• Operating Junction Temperature Max: 150°C
• Number of Pins: 3

Featuring compact dimensions of 43mm x 33mm x 15mm and weighing only 2 grams, this Darlington transistor is highly suitable for space-constrained applications while maintaining excellent thermal performance.