STMicroelectronics STW15NK90Z SuperMESH Power MOSFET, N-Channel 900V

The STMicroelectronics STW15NK90Z is a state-of-the-art 900V N-channel Power MOSFET, engineered using the advanced SuperMESH™ technology. This innovative design is an optimisation of the proven strip-based PowerMESH™ layout, delivering a significant reduction in on-resistance for superior performance. Special engineering ensures an extremely high dv/dt capability, making this component exceptionally robust for the most demanding and switching-intensive industrial applications.

This MOSFET is designed to meet today's challenging efficiency requirements. Key advancements include a minimised gate charge and very low intrinsic capacitance, which contribute to lower power dissipation and faster switching speeds. Every unit is 100% avalanche tested, guaranteeing reliability under stressful conditions, and the manufacturing process ensures very good repeatability for consistent performance across all components.

Key Features & Benefits

• SuperMESH™ Technology: Delivers a very low drain-source on-state resistance (Rds(on)) of just 0.55 ohm, enhancing efficiency and thermal performance.
• High Voltage Rating: With a drain-source voltage (Vds) of 900V, it is suitable for high-power circuits.
• Robust Design: The integrated Zener protection enhances durability, and the extreme dv/dt capability ensures stability in fast-switching environments.
• Efficiency Optimised: Reduced gate charge and intrinsic capacitance minimise switching losses, supporting modern high-efficiency power supply designs.
• Proven Reliability: 100% avalanche testing and excellent manufacturing repeatability provide confidence in every unit.

Housed in a industry-standard TO-247 through-hole package, the STW15NK90Z offers a continuous drain current (Id) of 9.5A and a maximum power dissipation of 350W, making it a powerful and reliable choice for designers.