VISHAY IRF540PBF N-Channel Power MOSFET, 100V, 28A, TO-220AB
VISHAY IRF540PBF 100V, 28A N-channel power MOSFET in TO-220AB package. Features low 0.077 Ohm Rds(on) & 175°C rating.
The VISHAY IRF540PBF is a robust N-channel power MOSFET designed for high-performance power management applications. As a third-generation MOSFET, it offers an optimal blend of fast switching speed, a ruggedised design for reliability, and a very low on-resistance of just 0.077 Ohm, ensuring efficient operation with minimal power loss.
Engineered for demanding environments, this component features a high dynamic dV/dt rating and is rated for repetitive avalanche conditions. It can operate at a maximum junction temperature of 175°C, making it suitable for high-temperature applications. Its design allows for easy paralleling in circuits to handle higher currents and requires only simple drive circuitry, simplifying system design.
The transistor is housed in a through-hole TO-220AB package, a common and versatile form factor that facilitates heat sinking and robust mechanical mounting. With a continuous drain current rating of 28A and a drain-source voltage of 100V, it is capable of handling significant power levels, supported by a power dissipation rating of 150W.
Key Specifications
- Channel Type: N-Channel
- Drain-Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 28A
- Drain-Source On-State Resistance (Rds(on)): 0.077 Ohm @ 10V
- Gate-Source Threshold Voltage (Max): 4V
- Maximum Operating Temperature: 175°C
- Package / Case Style: TO-220AB
- Mounting Type: Through Hole
- Number of Pins: 3
- Power Dissipation: 150W
Its combination of electrical characteristics and physical robustness makes the IRF540PBF an excellent choice for designers seeking a reliable and efficient power switching solution.
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