VISHAY IRF840PBF Power MOSFET N-Channel 500V 8A TO-220AB
High-performance N-Channel Power MOSFET from VISHAY. 500V, 8A, TO-220AB package. Ideal for power management.
The VISHAY IRF840PBF is a 500V N-channel Power MOSFET from the third generation of HEXFET® devices, engineered to provide an optimal combination of fast switching, a rugged design, and low on-resistance. This through-hole transistor, housed in a TO-220AB package, is a reliable choice for a range of commercial and industrial applications, particularly those involving power dissipation up to approximately 50W.
Key Features
- Dynamic dV/dt rating for enhanced robustness
- Repetitive avalanche rated for increased durability
- 175°C maximum operating temperature for demanding environments
- Easy to parallel for higher current requirements
- Simple drive requirement reduces design complexity
Applications
This power MOSFET is ideal for power management tasks, making it suitable for use in power supplies, motor controls, and other switching applications where efficiency and reliability are crucial.
Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 500V
- Continuous Drain Current (Id): 8A
- Drain Source On-State Resistance: 0.85Ω
- Transistor Case Style: TO-220AB
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 125W
- No. of Pins: 3
- Operating Temperature Max: 150°C
- Product Weight: 2g
With its robust construction and advanced HEXFET® technology, the IRF840PBF delivers consistent performance and longevity, making it a dependable component for your power electronics projects.
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- Delivery to United States: 3-5 business days*
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