VISHAY N Channel Power MOSFET, 400V, 5.5A, TO-220AB

The VISHAY N Channel Power MOSFET is a robust and high-performance component designed for demanding power switching applications. With a high drain-source voltage rating of 400V and a continuous drain current of 5.5A, this transistor offers reliable operation in circuits requiring efficient power management. Its low on-state resistance of just 1 ohm minimises power loss and heat generation, enhancing overall system efficiency.

This MOSFET is engineered for durability, featuring a dynamic dV/dt rating and being repetitive avalanche rated, which ensures stability under transient voltage stresses. It can operate at a maximum junction temperature of 150°C, making it suitable for high-temperature environments. The device is easy to parallel, allowing for current sharing in high-power designs, and has simple drive requirements, simplifying the gate driving circuitry.

Housed in the industry-standard TO-220AB through-hole package, it is designed for straightforward mounting on printed circuit boards (PCBs) and offers excellent thermal performance when coupled with a heatsink. With a power dissipation capability of 74W, it is built to handle significant thermal loads. This component is a versatile choice for designers seeking a reliable power switch for a wide range of electronic applications.