VISHAY N Channel Power MOSFET, 500V, 8.7A, TO-220AB

The VISHAY N Channel Power MOSFET is a robust, high-voltage power transistor designed for demanding electronic applications. It is supplied in a standard TO-220AB through-hole package, making it easy to integrate into a wide range of power supply and control circuits.

With a high drain-source voltage rating of 500V and a continuous drain current capability of 8.7A, this MOSFET can handle significant power loads. It features a low drain-source on-state resistance of 0.85ohm (tested at 10V), which minimises conduction losses and improves overall efficiency in switching applications. The device has a high maximum power dissipation of 156W, supported by a maximum operating temperature of 150°C.

Its high-voltage and current ratings, combined with a standard package, make this MOSFET a versatile choice for power conversion and motor control tasks in industrial and commercial settings.

Specifications Summary:

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 500V
• Continuous Drain Current (Id): 8.7A
• Drain-Source On-State Resistance (Rds(on)): 0.85ohm (at 10V)
• Gate-Source Threshold Voltage (Max): 5V
• Power Dissipation: 156W
• Package / Case Style: TO-220AB
• Mounting Type: Through Hole
• Pin Count: 3 Pins
• Max Operating Temperature: 150°C
• Package Dimensions: 33mm (Width) x 15mm (Depth) x 43mm (Height)