VISHAY Power MOSFET N Channel 60V 4.3A SOT-23 SMD

The VISHAY Power MOSFET is an N Channel TrenchFET® device designed for efficient power management in surface mount applications. This transistor is 100% Rg and UIS tested, ensuring high reliability and robust performance in demanding circuits.

Featuring a drain source voltage (Vds) of 60V and a continuous drain current (Id) of 4.3A, this MOSFET is suitable for a variety of switching and amplification tasks. It offers a drain source on-state resistance of 0.068 ohm when tested at a gate source voltage of 10V, providing excellent conductivity and reduced power loss. The gate source threshold voltage reaches a maximum of 2V, while the total power dissipation is rated at 3.3W.

Housed in a compact SOT-23 case style with 3 pins, this surface mount device is ideal for space-constrained PCB designs. It is qualified to the AEC-Q101 standard, making it highly suitable for automotive applications, and can operate reliably in ambient temperatures up to 175°C.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 4.3A
• Drain Source On State Resistance: 0.068 ohm
• Power Dissipation: 3.3W
• Operating Temperature Max: 175°C
• Dimensions: 43 mm x 33 mm x 15 mm
• Weight: 0.065 grams