VISHAY P Channel Power MOSFET 60V 52A PowerPAK SO

The VISHAY P Channel Power MOSFET from the SQ series is an AEC-Q101 qualified automotive component, manufactured using a dedicated process flow to ensure ruggedness and reliability. Rated for a maximum junction temperature of 175 °C, this device utilises advanced TrenchFET® technology to deliver low on-resistance in a lead (Pb)- and halogen-free package.

Housed in the PowerPAK SO case style, this surface mount MOSFET saves valuable board space compared to traditional D2PAK, DPAK, and SO-8 packages, while still delivering similar on-resistance and thermal resistance performance. This makes it an excellent choice for compact automotive and industrial applications where efficient space utilisation and thermal management are critical.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 52 A
• Drain Source On State Resistance: 0.018 ohm
• Power Dissipation: 83 W
• Gate Source Threshold Voltage Max: 2 V
• Number of Pins: 8

Designed for high efficiency and robust performance, this MOSFET is perfectly suited for demanding environments. Its surface mount design allows for automated assembly and streamlined production processes.