VISHAY P Channel Power MOSFET 60V 8.8A 0.28 Ohm TO-252
VISHAY P Channel Power MOSFET, 60V, 8.8A, 0.28 ohm, TO-252 (DPAK). Fast switching, rugged design for surface mount power management.
The VISHAY P Channel Power MOSFET is designed for fast switching, rugged device design, and low on-resistance. This component offers reliable performance for various power management applications, ensuring efficiency and stability in your electronic circuits.
Featuring a TO-252 (DPAK) case style, this transistor is specifically designed for surface mounting using vapour phase, infrared, or wave soldering techniques. Please note that the straight lead version is intended for through-hole mounting applications. In typical surface mount applications, power dissipation levels of up to 1.5W are achievable.
Key Features
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching capability
- Low on-resistance
- Surface mount design
Specifications
- Channel Type: P Channel
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 8.8A
- Drain Source On State Resistance: 0.28 ohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 42W
- Number of Pins: 3
- Operating Temperature Max: 150°C
- Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
- Transistor Case Style: TO-252 (DPAK)
- Transistor Mounting: Surface Mount
- Dimensions: 43 mm x 33 mm x 15 mm
- Weight: 0.4 grams
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