VISHAY Power MOSFET P-Channel 60V 53A TO-220AB

The VISHAY SUP53P06-20-E3 Power MOSFET is a high-performance P-channel TrenchFET® device, engineered for efficient power management in a wide range of applications. With a drain-source voltage rating of -60V and a continuous drain current of 53A, this MOSFET delivers robust switching capabilities for demanding circuits. It is 100% UIS tested, ensuring reliability in avalanche conditions. The device features a low on-state resistance of just 0.0195ohm (at Vgs = 10V), minimising conduction losses and improving overall system efficiency.

Housed in a standard TO-220AB through-hole package, this MOSFET is easy to integrate into existing PCB designs and offers excellent thermal performance. It operates reliably across a wide temperature range, with a maximum junction temperature of 150°C. The gate-source threshold voltage is a maximum of 1V, making it suitable for low-voltage drive circuits. The product is designed for power management tasks, providing stable and efficient operation in various electronic systems.

Key Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): -60V
• Continuous Drain Current (Id): 53A
• On-State Resistance (Rds(on)): 0.0195ohm at Vgs = 10V
• Power Dissipation: 3.1W
• Transistor Case Style: TO-220AB
• Mounting Type: Through Hole
• Number of Pins: 3
• Rds(on) Test Voltage: 10V
• Gate-Source Threshold Voltage (max): 1V
• Operating Temperature (max): 150°C

The VISHAY SUP53P06-20-E3 is a dependable choice for engineers seeking a high-quality P-channel MOSFET for their power management designs.