VISHAY SI2305CDS-T1-GE3 MOSFET, P Channel, 8V, 5.8A
VISHAY SI2305CDS-T1-GE3 P-channel MOSFET, 8V, 5.8A, 0.035Ω, SOT-23 surface mount. Ideal for load switches and DC-DC converters.
The VISHAY SI2305CDS-T1-GE3 is a P-channel enhancement-mode Power MOSFET featuring a TrenchFET® design, optimized for efficient load switching and DC-to-DC converter applications. With a Drain-Source Voltage (Vds) of 8V and a continuous Drain Current (Id) of 5.8A, this MOSFET delivers reliable performance in compact, surface-mount designs.
Engineered for industrial, power management, and portable device applications, the SI2305CDS-T1-GE3 undergoes 100% Rg testing to ensure consistent gate resistance, contributing to predictable switching behavior. It operates over a wide temperature range from -55°C to 150°C, making it suitable for demanding environments. The device is halogen-free, supporting environmentally conscious manufacturing.
Key Specifications:
- Channel Type: P Channel
- Drain Source Voltage (Vds): 8V
- Continuous Drain Current (Id): 5.8A
- Drain Source On-State Resistance (Rds(on)): 0.035Ω
- Rds(on) Test Voltage: 4.5V
- Gate Source Threshold Voltage Max: 1V
- Power Dissipation: 1.7W
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- No. of Pins: 3
- Operating Temperature Range: -55°C to 150°C
This MOSFET is ideal for designers seeking a compact, efficient switching solution with robust thermal performance and ease of integration into PCB layouts. Its small SOT-23 package and low on-state resistance help minimize power losses and save board space, making it a versatile choice for modern electronic designs.
- Dispatched within 0-2 business days
- Delivery to United States: 3-5 business days*
- Free Shipping Included
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