Vishay SI2333DDS-T1-GE3 P-Channel MOSFET 12V 6A SOT-23
Vishay SI2333DDS P-Channel MOSFET, 12V, 6A, 0.028ohm, SOT-23. Low Rds(on) for efficient load switching. Ideal for industrial power management.
The Vishay SI2333DDS-T1-GE3 is a P-channel enhancement-mode Power MOSFET designed for efficient load switching and battery management in modern electronic systems. This TrenchFET® technology device delivers a compact, high-performance solution for space-constrained applications. With a drain-source voltage rating of 12V and a continuous drain current of 6A, this MOSFET ensures reliable operation in a variety of power switching circuits.
Featuring a very low on-state resistance of just 0.028 ohms (at 4.5V gate drive), the SI2333DDS-T1-GE3 minimises conduction losses, improving overall system efficiency. The device is housed in a surface-mount SOT-23 package, making it suitable for automated assembly and reducing board space requirements. This MOSFET operates over a wide temperature range of -55°C to +150°C, ensuring stable performance in demanding environments.
The device is 100% Rg tested, guaranteeing consistent and reliable switching behaviour. It is also halogen-free, meeting modern environmental standards. The low gate-source threshold voltage (max 400mV) allows for easy drive from low-voltage logic circuits. With a maximum power dissipation of 1.7W and three pins in a compact SOT-23 footprint, this component is an excellent choice for industrial power management and load switch applications where space and efficiency are critical.
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