INFINEON Power MOSFET, N Channel, 100V, TO-220AB, Through Hole - 33

The INFINEON Power MOSFET is a high-performance, N-channel HEXFET® device engineered for superior power management and switching efficiency. Featuring an extremely low on-resistance per silicon area, this component minimises power losses and heat generation, making it ideal for demanding applications where energy efficiency is critical. Its fast switching performance, combined with the renowned ruggedised design of the HEXFET platform, provides designers with a robust and reliable solution for a wide variety of circuits.

This fully avalanche-rated MOSFET is built with advanced process technology and features a logic-level gate drive, simplifying integration with modern microcontrollers and digital systems without the need for additional driver circuitry. Its dynamic dv/dt rating ensures stability and protection in high-speed switching environments, enhancing the overall durability and lifespan of your electronic designs.

Housed in the industry-standard TO-220AB package with through-hole mounting, it offers excellent thermal performance and is easy to install on printed circuit boards. The device is capable of handling significant continuous current and power dissipation, making it a versatile choice for power supplies, motor control, DC-DC converters, and amplification stages.

With its high maximum operating temperature and robust construction, this MOSFET delivers consistent, long-term performance even in challenging conditions. It is a fundamental component for engineers and hobbyists looking to build efficient, powerful, and reliable electronic systems.

Variant Details

• Size: 33