STMicroelectronics N Channel Power MOSFET, 0.75 ohm, TO-247, Through Hole - 800 10.5

The STMicroelectronics N Channel Power MOSFET utilises advanced SuperMESH™ technology, providing an exceptional balance of performance and efficiency for demanding electronic circuits. Developed through the optimisation of ST's well-established strip-based PowerMESH™ layout, this device achieves a significant reduction in ON-resistance alongside a minimised gate charge. This ensures efficient power management and reduced switching losses, making it highly suitable for industrial applications.

Engineered to deliver a high level of dV/dt capability, this Power MOSFET is designed to withstand the rigours of the most challenging environments. It features integrated Zener-protection for enhanced reliability and is 100% avalanche tested to guarantee robustness under stress. The through-hole mounting and TO-247 case style facilitate straightforward installation and effective thermal management, ensuring stable operation even under high power dissipation conditions.

Key Features and Benefits:

• SuperMESH™ technology for optimised performance
• Integrated Zener-protection
• Minimised gate charge for efficient switching
• Extremely high dV/dt capability
• 100% avalanche tested for robust reliability

Whether you are designing for power management systems or heavy-duty industrial equipment, this STMicroelectronics Power MOSFET provides the durability and electrical performance required for critical applications.

Variant Details

• Size: 800 10.5