VISHAY - Power MOSFET, N Channel, 1.5 ohm, TO-220AB, Through Hole - 200 3.3

The VISHAY IRF830PBF Power MOSFET is a robust, high-performance N-channel semiconductor designed for demanding power-switching applications. It is built to offer reliable operation in high-voltage environments, featuring a 500-volt drain-source voltage rating and a continuous drain current capacity of 4.5 amps. With a low on-state resistance of just 1.5 ohms, it provides excellent conduction efficiency, reducing power losses and heat generation within circuits.

This MOSFET is particularly engineered for switch-mode power supplies (SMPS), where its low gate charge facilitates simple drive requirements and supports high-frequency operation. Its dynamic dV/dt rating and repetitive avalanche capability ensure robustness against voltage spikes, enhancing system reliability. Rated for a maximum operating temperature of 150°C, it is suitable for use in challenging thermal conditions.

The device is housed in the industry-standard TO-220AB package, a through-hole mounting style that offers excellent thermal performance and mechanical stability for prototyping and production. Its design allows for easy paralleling in applications requiring higher current handling. With three pins and a power dissipation rating of 74 watts, it is a versatile component for power management in various electronic systems, from uninterruptible power supplies to high-speed power switching circuits. This component combines high voltage tolerance with efficient switching characteristics for professional-grade power electronics.

Variant Details

• Size: 200 3.3