Diodes Inc. BC847BS-7-F Dual NPN Transistor Array, SOT-363

The Diodes Inc. BC847BS-7-F is a high-performance dual NPN transistor array, specifically engineered for switching and audio frequency (AF) amplifier applications. Encased in an ultra-compact SOT-363 surface-mount package, it is perfect for space-constrained modern electronics where board real estate is at a premium. This component delivers reliable performance with a power dissipation of 200mW at an ambient temperature of +25°C, ensuring stable operation in a variety of circuit designs.

Key electrical characteristics make this transistor array a versatile choice. It offers a minimum collector-emitter breakdown voltage of 45V and a collector-base breakdown voltage of 50V, providing a solid margin for many standard circuit voltages. With a DC collector current rating of 100mA and a guaranteed minimum DC current gain (hFE) of 200, it ensures strong signal amplification and efficient switching capabilities. Furthermore, its impressive gain bandwidth product of 100MHz facilitates excellent high-frequency response, suitable for a broad spectrum of audio and signal processing tasks.

Specifications and Features

• Dual NPN Configuration: Contains two independent NPN transistors in a single package, simplifying circuit design and saving space.
• High Voltage Tolerance: Rated for collector-emitter voltages up to 45V and collector-base voltages up to 50V.
• Robust Current Handling: Can handle a continuous collector current of 100mA.
• High Gain: Features a minimum DC current gain of 200hFE for effective amplification.
• Excellent Frequency Performance: Boasts a transition frequency of 100MHz, ideal for AF and RF applications.
• Compact SMD Package: Housed in a space-saving 6-pin SOT-363 case for surface-mount technology (SMT) assembly.
• Wide Temperature Range: Operates and can be stored reliably across an extensive temperature range from -55°C to +150°C. <br /