DIODES INC. DMN2004K-7 N Channel MOSFET, 20V, 630mA, SOT-23, Surface Mount

The DIODES INC. DMN2004K-7 is an N-channel enhancement-mode MOSFET designed for high-efficiency power management applications. Its moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals meet the MIL-STD-202 standard, ensuring reliable performance and durability.

This device is engineered to minimise ON-state resistance (RDS(ON)) while maintaining superior switching performance. With low gate threshold voltage, low input capacitance, and fast switching speeds, it delivers efficient operation in a wide range of circuits. The MOSFET is ESD protected up to 2KV and is a halogen-free, green device, supporting modern environmental standards.

Qualified to the AEC-Q101 standards for high reliability, this component is suitable for demanding applications in power management, aerospace, defence, military, and automotive sectors. Its moisture sensitivity level 1 rating (per J-STD-020) and UL94V-0 flammability rating ensure robust performance in various operating conditions.

Specifications

_ Channel Type: N Channel _ Drain Source Voltage (Vds): 20V _ Continuous Drain Current (Id): 630mA _ Drain Source On State Resistance (RDS(ON)): 0.55ohm _ Transistor Case Style: SOT-23 _ Transistor Mounting: Surface Mount _ Rds(on) Test Voltage: 4.5V _ Gate Source Threshold Voltage Max: 1.6V _ Power Dissipation: 350mW _ No. of Pins: 3 Pins _ Operating Temperature Max: 150°C _ ESD Protection: Up to 2KV _ Packaging: Halogen-free, Green device _ Reliability: Qualified to AEC-Q101 standards _ Moisture Sensitivity Level: 1 (per J-STD-020) _ Flammability Rating: UL94V-0

The transistor case style is SOT-23 and the mounting type is surface mount, which facilitates compact circuit board designs. This component's fast switching capabilities and low leakage make it an excellent choice for power management systems.