DIODES INC. FZT753 PNP Silicon Transistor, SOT-223, 100V 2A
DIODES INC. FZT753 PNP silicon transistor. 100V, 2A, 2W dissipation in SOT-223 package. Low saturation voltage, high hFE. Ideal for switching & amplification.
The DIODES INC. FZT753 is a PNP silicon planar medium power transistor designed for efficient performance in a compact, surface-mount package. Engineered to handle significant power, it features a high collector-emitter voltage rating of 100V and a continuous collector current of 2A, making it suitable for a wide range of switching and amplification applications.
A key characteristic is its low saturation voltage, which contributes to reduced power loss and improved efficiency in circuit designs. The device also boasts an excellent DC current gain (hFE), which is reliably specified up to its full 2A rating, ensuring consistent performance. For complementary circuit designs, the NPN-type FZT653 is available as a matching pair.
Housed in a robust SOT-223 package, this transistor is ideal for space-constrained printed circuit board (PCB) layouts. With a power dissipation rating of 2W, it can manage substantial thermal loads, supported by a maximum operating temperature of 150°C. Its high transition frequency of 140MHz makes it responsive for various signal processing tasks.
This component is classified under MSL 1 (Moisture Sensitivity Level 1), meaning it has an unlimited floor life at factory conditions (<30°C/85% RH), simplifying handling and storage prior to assembly. Its reliable construction and specified performance parameters make it a dependable choice for industrial, automotive, and consumer electronics applications requiring a robust PNP transistor solution.
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