
Diodes Inc. MMBTA06 NPN transistor. 500mA, 80V, SOT-23 SMD package. For low-power amplification, switching & industrial use.
The Diodes Inc. MMBTA06-7-F is a high-performance, small-signal NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It delivers a continuous collector current of 500mA with a high collector-base voltage rating of 80V, making it a robust choice for managing signals in demanding circuits. With a power dissipation of 300mW and a transition frequency of 100MHz, it provides reliable performance for audio, control, and interface functions.
Constructed with an epitaxial planar die, this transistor ensures consistent electrical characteristics and long-term stability. It is a halogen-free, green device, aligning with modern environmental and safety standards, and carries a UL94V-0 flammability rating for enhanced material safety. The complementary PNP type is the MMBTA56, allowing for flexible circuit design in push-pull or complementary output stages.
Key Features & Benefits
This transistor is an essential component for engineers and hobbyists designing circuits for power management, signal conditioning, and digital switching.
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