Diodes Inc. N-Channel Power MOSFET, 60V 2A, SOT-23

The Diodes Inc. DMN6075S-7 is an N-channel enhancement mode power MOSFET, engineered using a new generation process to deliver outstanding efficiency in power management circuits. Its design is optimised to minimise on-state resistance (RDS(ON)), resulting in lower power losses and superior switching performance, which is crucial for modern, high-efficiency applications.

This surface-mount device is housed in a compact SOT-23 package, making it ideal for space-constrained designs such as portable electronics, power supplies, and DC-DC converter modules. With a drain-source voltage (Vds) rating of 60V and a continuous drain current (Id) of 2A, it provides robust performance for a variety of low-to-medium power tasks.

Key Features & Benefits

• Low On-Resistance: Features a static drain-source on-resistance of just 85 milliohms maximum (at VGS=10V), which significantly reduces conduction losses and improves overall system efficiency.
• Fast Switching Speed: Combined with low input capacitance, this MOSFET enables rapid switching transitions, minimising switching losses and allowing for higher frequency operation in power converters.
• High Current Capability: Supports a pulsed drain current of up to 12A (with a 10µs pulse), providing good headroom for transient load conditions.
• Wide Temperature Range: Reliable operation is assured across an extensive operating and storage temperature range from -55°C to +150°C.
• Robust Gate Protection: The gate-source voltage can withstand up to ±20V, offering good margin for gate drive circuits.

Typical Applications

This MOSFET is perfectly suited for power management functions where efficiency and compact size are paramount. Common uses include backlighting driver circuits for displays, load switching, motor control, and as the main switching element in synchronous and non-synchronous DC-DC buck, boost, and buck-boff