DIODES INC. P-Channel Power MOSFET 30V 4.3A SOT-23 SMD

This P-Channel Enhancement Mode Power MOSFET from Diodes Inc. is engineered to minimise on-state resistance (RDS(ON)) while maintaining high switching performance. This makes it a suitable choice for high-efficiency power management applications.

Featuring low on-resistance, a low gate threshold voltage, and low input capacitance, this MOSFET ensures fast switching speeds alongside low input and output leakage. It is designed to deliver reliable operation across a wide temperature range, making it versatile for various circuit designs.

Key Features:

• Low on-resistance, low gate threshold voltage, and low input capacitance
• Fast switching speed with low input/output leakage
• Drain-source voltage: -30V at TA = +25°C
• Gate-source voltage: ±25V at TA = +25°C
• Continuous drain current: -4.3A (steady state) at TA = +25°C, VGS = -10V
• Pulsed drain current: -20A at TA = +25°C
• Total power dissipation: 1.38W at TA = +25°C
• Static drain-source on-resistance: 50mΩ max at VGS = -10V, ID = -6.0A, TA = +25°C
• SOT-23 standard surface mount package

The component operates and stores safely within a temperature range of -55°C to +150°C. With a compact SOT-23 footprint, it is well-suited for space-constrained PCB layouts requiring efficient power handling.